Part Number Hot Search : 
02242 73G06P MAX4063 MAC210A6 CPH5862 30CPQ10 58004 C102M
Product Description
Full Text Search
 

To Download 2SC24120712 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  bl galaxy electrical production specification silicon epitaxial planar transistor 2sc2412 document number: bl/ssstc020 www.galaxycn.com rev.a 1 features z low c ob ,c ob =2.0pf. z complementary to 2sa1037 applications z npn silicon epitaxial planar transistor sot-23 ordering information type no. marking package code 2sc2412 bq,br,bs sot-23 maximum rating @ ta=25 unless otherwise specified symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current -continuous 150 ma p c collector dissipation 200 mw t j, t stg junction and storage temperature -55~150 pb lead-free
bl galaxy electrical production specification silicon epitaxial planar transistor 2sc2412 document number: bl/ssstc020 www.galaxycn.com rev.a 2 electrical characteristics @ ta=2 5 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 7 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =7v,i c =0 0.1 a dc current gain h fe v ce =6v,i c =1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =50ma, i b =5ma 0.4 v collector output capacitance c ob v cb =12v,i e =0a, f=1mhz 2.0 3.5 pf transition frequency f t v ce =12v, i e = -2ma f=100mhz 180 mhz classification of h fe(1) rank q r s range 120-270 180-390 270-560 marking bq br bs
bl galaxy electrical production specification silicon epitaxial planar transistor 2sc2412 document number: bl/ssstc020 www.galaxycn.com rev.a 3 typical characteristics @ ta=25 unless otherwise specified
bl galaxy electrical production specification silicon epitaxial planar transistor 2sc2412 document number: bl/ssstc020 www.galaxycn.com rev.a 4 package outline plastic surface mounted package sot-23 soldering footprint unit : mm package information sot-23 dim min max a 2.85 2.95 b 1.25 1.35 c 1.0typical d 0.37 0.43 e 0.35 0.48 g 1.85 1.95 h 0.02 0.1 j 0.1typical k 2.35 2.45 all dimensions in mm device package shipping 2sc2412 sot-23 3000/tape&reel


▲Up To Search▲   

 
Price & Availability of 2SC24120712

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X